tlp801a(f) 2004-02-12 1 toshiba photo ? interrupter infrared led+phototransistor tlp801a(f) lead free product optical switches position and rotation detection timing detection in copiers, printers, fax machines, etc. the tlp801a(f) photo ? interrupter can be used for high-speed position detection. ? gap: 3mm ? resolution: slit width = 1mm ? fast response speed: t r , t f = 6s(typ.) ? high current transfer ratio: i c / i f = 10%(min) ? designed for direct mounting on printed circuit boards ? package material: polycarbonate maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma forward current derating (ta > 25c) ? i f / c ? 0.33 ma / c led reverse voltage v r 5 v collector-emitter voltage v ceo 30 v emitter-collector voltage v eco 5 v collector power dissipation p c 75 mw collector power dissipation derating(ta > 25c) ? p c / c ? 1 mw / c detector collector current i c 50 ma operating temperature range t opr ? 25~85 c storage temperature range t stg ? 40~100 c toshiba 11 ? 13d2 weight: 0.78g(typ.) 4 .com u datasheet
tlp801a(f) 2004-02-12 2 markings optical and electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10ma 1.00 1.15 1.30 v reverse current i r v r = 5v D D 10 a led peak emission wavelength p i f = 20ma D 940 D nm dark current i d (i ceo ) v ce = 24v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D 820 D nm current transfer ratio i c / i f v ce = 5v, i f = 20ma 10 D 165 % collector ? emitter saturation voltage v ce(sat) i f = 20ma, i c = 1ma D 0.15 0.4 v rise time t r D 6 D coupled fall time t f v cc = 5v, i c = 2ma, r l = 100 ? D 6 D s monthly lot number product number year of manufacture month of manufacture ( januar y to december denoted b y letters a to l res p ectivel y) last digit of year of manufacture letter color: silver p801 a 4 .com u datasheet
tlp801a(f) 2004-02-12 3 precautions the following points must be borne in mind. 1. soldering temperature: 260c max soldering time: 5s max (soldering must be performed 1.5mm under the package body.) 2. clean only the soldered part of the leads. do not immerse the entire package in the cleaning solvent. 3. mount the device on a level surface. 4. screws should be tightened to a clamping torque of 0.59 n ? m. 5. the package is made of polycarbonate. polycarbonate is usually stable with acid, alcohol and aliphatic hydrocarbons, however, with petrochemicals (such as benzene, toluene and acetone), alkalis, aromatic hydrocarbons, or chloric hydrocarbons, polycarbonate may crack, swell or melt. please take this into account when choosing a packaging material by referring to the table below. phenomenon chemicals a staining and slight deterioration ? nitric acid (diluted), hydrogen peroxide, chlorine b cracking, crazed or swelling ? acetic acid (70% or more) ? gasoline ? methyl ethyl ketone, ethyl acetate, butyl acetate ? ethyl methacrylate, ethyl ether, mek ? acetone, m ? amino alcohol, carbon tetrachloride ? carbon disulfide, trichloroethylene, cresol ? thinners,oil of turpentine ? triethanolamine, tcp, tbp c melting ( ): used as solvent ? concentrated sulfuric acid ? benzene ? styrene, acrylonitrile, vinyl acetate ? ethylenediamine, diethylenediamine ? (chloroform, methyl chloride, tetrachloromethane,dioxane, 1, 2 ? dichloroethane) d decomposition ? ammonia water ? other alkalis 6. conversion efficiency falls over time due to current which flows in the infrared led. when designing a circuit, take into account this change in conversion efficiency over time. the ratio of fluctuation in conversion efficiency to fluctuation in infrared led optical output is 1 : 1. (0) p (t) p (0) /i i (t) i / i o o f c f c = 4 .com u datasheet
tlp801a(f) 2004-02-12 4 package dimensions weight: 0.78g(typ.) pin connection 1. anode 2. cathode 3. collector 4. emitter 1 2 3 4 4 .com u datasheet
tlp801a(f) 2004-02-12 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 80 0 60 40 20 0 20 40 60 80 100 forward current i f (ma) collector current i c (ma) ta = 2 5 c 10 20 0.1 1 5 3 1 0.5 0.3 3 10 30 100 v ce = 5v 0.4 i c ? i f (typ.) forward voltage v f (v) forward current i f (ma) 100 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 50 30 10 5 3 ta = 75 c 50 25 0 ? 25 i f ? v f (typ.) 100 3 1 50 30 10 5 30 100 10 3 forward current i f (ma) current transfer ratio i c / i f (%) ta = 25c v ce = 5v 0.4 i c / i f ? i f (typ.) 16 0 0 14 12 10 8 6 4 2 8 6 4 2 10 12 14 16 collector-emitter voltage v ce (v) collector current i c (ma) ta = 2 5 c i c ? v ce (typ.) 36 32 28 24 20 16 p c max 12 8 i f = 4ma 4 .com u datasheet
tlp801a(f) 2004-02-12 6 i d (i ceo ) ? ta (typ.) ambient temperature ta (c) dark current i d (i ceo ) (a) 10 - 4 10 10 - 3 100 20 40 60 80 1 10 - 1 10 - 2 0 v ce = 24v 10 5 v ce(sat) ? ta (typ.) ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.32 0.28 ? 40 0.24 0.20 0.16 0.12 0.08 0.04 0 ? 20 0 20 40 60 80 100 i f = 20ma i c = 1ma 24 0 0 20 16 12 8 4 1 2 3 4 5 40 i c ? v ce (typ.) collector-emitter voltage v ce (v) collector current i c (ma) p c max 50 45 35 30 2 5 20 1 5 10 i f = 5m a ta = 2 5 c relative i c ? ta (tyg.) ambient temperature ta (c) relative collector current 1.4 0 - 40 1.2 1.0 0.6 0.4 0.2 0.8 - 20 0 20 40 60 80 100 1.6 v ce = 0.4v 5 i f = 20ma 4 .com u datasheet
tlp801a(f) 2004-02-12 7 1 0.1 300 100 50 30 10 5 3 0.3 1 3 10 t s switching characteristics non saturated operation typ. load resistance r l (k ? ) switching time (s) ta = 2 5 c repetitive frequency = 1khz duty = 1 / 2 t d t f t r , i f v cc = 5v v out = 3v r l detection position characteristics (1) typ. distance d (mm) relative collector current i f = 20ma v ce = 5v ta = 25c + 0 d shut -ter ? 1.0 0 ? 3 0.8 0.6 0.4 0.2 ? 2 ? 1 0 1 2 3 4 switching characteristics saturated operation typ. load resistance r l (k ? ) switching time (s) i f v cc = 5v v out 4.6v r l 1000 1 1 10 30 50 300 500 5 3 3 10 30 100 100 t f t s t d detection position characteristics (2) typ. distance d (mm) relative collector current i f = 20ma v ce = 5v ta = 25c 1.0 0 4 5 6 7 8 9 10 11 0.8 0.6 0.4 0.2 shutter d t d 3v i f v out t r t s t f 0v 90% 10% 500 t d i f v out t r t s t f 90% 10% 0v t r 4 .com u datasheet
tlp801a(f) 2004-02-12 8 relative positioning of shutter and device for normal operation position the shutter and the device as shown in the figure below. by considering the device?s detection direction characteristic and switching time, determine the shutter slit width and pitch. unit in mm center of sensor 8min 5.5max 6.85 cross section between a and a? shutter a a 4 .com u datasheet
tlp801a(f) 2004-02-12 9 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to im prove the quality and reliab ility of its products. neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. ? gaas(gallium arsenide) is used in this product. the dust or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. 030619eac restrictions on product use 4 .com u datasheet
|
